IndiumV3, Russie, Analysis, bibRecord, 000043

Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction

Identifieur interne : 000043 ( Russie/Analysis ); précédent : 000042; suivant : 000044

Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction

Auteurs : RBID : Pascal:12-0353711

Descripteurs français

Pascal (Inist)
- Bande interdite, Distribution concentration, Dépôt laser pulsé, Epitaxie phase liquide, Diffraction RX, Diffraction Bragg, Profil profondeur, Spectre SIMS, Impureté, Addition indium, Addition manganèse, Hétérostructure, Gallium Arsénioantimoniure, Semiconducteur semimagnétique, Couche épitaxique, Nanostructure.

English descriptors

KwdEn :
- Bragg diffraction, Concentration distribution, Depth profiles, Energy gap, Epitaxial layers, Gallium Antimonides arsenides, Heterostructures, Impurities, Indium additions, LPE, Manganese additions, Nanostructures, Pulsed laser deposition, Secondary ion mass spectra, Semimagnetic semiconductors, XRD.

Abstract

Nanotechnology of obtainment of diluted magnetic semiconductors based on the GaInAsSb compounds is developed using the pulsed laser ablation deposition of Mn atoms on the surface of the epitaxial layer of a quaternary alloy obtained by liquid phase epitaxy. Fabricated heterostructures were studied using high-resolution X-ray diffraction for the Bragg and grazing diffraction geometries, and the depth profiling analysis was performed by secondary ion mass spectrometry. It was established that the nanoscale region of the Ga_0.96In_0.04As_0.11Sb_0.89 epilayer near the deposition surface of atomic Mn exhibits the presence of a quinary compound with Mn atoms in the lattice of the solid solution layer.

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Pascal:12-0353711

Le document en format XML

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<author><name sortKey="Moiseev, K" uniqKey="Moiseev K">K. Moiseev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physical-Technical Institute RAS, St. Politekhnicheskaya 26</s1>
<s2>St Petersburg, 194021</s2>
<s3>RUS</s3>
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<country>Russie</country>
<wicri:noRegion>St Petersburg, 194021</wicri:noRegion>
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<author><name sortKey="Mikhailova, M" uniqKey="Mikhailova M">M. Mikhailova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physical-Technical Institute RAS, St. Politekhnicheskaya 26</s1>
<s2>St Petersburg, 194021</s2>
<s3>RUS</s3>
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<country>Russie</country>
<wicri:noRegion>St Petersburg, 194021</wicri:noRegion>
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<author><name sortKey="Lesnikov, V" uniqKey="Lesnikov V">V. Lesnikov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Lobachevsky State University, Av. Gagarina 23</s1>
<s2>Nizhniy Novgorod, 603021</s2>
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<author><name sortKey="Koudriavtseva, O" uniqKey="Koudriavtseva O">O. Koudriavtseva</name>
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<author><name sortKey="Escobosa, A" uniqKey="Escobosa A">A. Escobosa</name>
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<term>Depth profiles</term>
<term>Energy gap</term>
<term>Epitaxial layers</term>
<term>Gallium Antimonides arsenides</term>
<term>Heterostructures</term>
<term>Impurities</term>
<term>Indium additions</term>
<term>LPE</term>
<term>Manganese additions</term>
<term>Nanostructures</term>
<term>Pulsed laser deposition</term>
<term>Secondary ion mass spectra</term>
<term>Semimagnetic semiconductors</term>
<term>XRD</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Bande interdite</term>
<term>Distribution concentration</term>
<term>Dépôt laser pulsé</term>
<term>Epitaxie phase liquide</term>
<term>Diffraction RX</term>
<term>Diffraction Bragg</term>
<term>Profil profondeur</term>
<term>Spectre SIMS</term>
<term>Impureté</term>
<term>Addition indium</term>
<term>Addition manganèse</term>
<term>Hétérostructure</term>
<term>Gallium Arsénioantimoniure</term>
<term>Semiconducteur semimagnétique</term>
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<front><div type="abstract" xml:lang="en">Nanotechnology of obtainment of diluted magnetic semiconductors based on the GaInAsSb compounds is developed using the pulsed laser ablation deposition of Mn atoms on the surface of the epitaxial layer of a quaternary alloy obtained by liquid phase epitaxy. Fabricated heterostructures were studied using high-resolution X-ray diffraction for the Bragg and grazing diffraction geometries, and the depth profiling analysis was performed by secondary ion mass spectrometry. It was established that the nanoscale region of the Ga<sub>0.96</sub>
In<sub>0.04</sub>
As<sub>0.11</sub>
Sb<sub>0.89</sub>
 epilayer near the deposition surface of atomic Mn exhibits the presence of a quinary compound with Mn atoms in the lattice of the solid solution layer.</div>
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 epilayer near the deposition surface of atomic Mn exhibits the presence of a quinary compound with Mn atoms in the lattice of the solid solution layer.</s0>
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   |texte=   Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction
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Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction

Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri